题目：

Ion–Dipole Interaction Enabling Highly Efficient CsPbI3 Perovskite Indoor Photovoltaics

作者：

Kai-Li Wang^1#, Haizhou Lu^2#,Meng Li^3#,Chun-Hao Chen¹, Ding- Bo Zhang⁴, Jing Chen¹, Jun-Jie Wu¹, Yu-Hang Zhou¹, Xue-Qi Wang¹, Zhen-Huang Su⁵, Yi-Ran Shi¹, Qi-Sheng Tian¹, Yu-Xiang Ni⁴, Xing-Yu Gao⁵, Shaik M. Zakeeruddin², Michael Grätzel²*, Zhao-Kui Wang¹*, and Liang-Sheng Liao^1,6

单位：

¹Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon TechnologiesSoochow University, Suzhou, China.

²Laboratory of Photonics and Interfaces, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne CH-1015, Switzerland.

³Key Lab for Special Functional Materials, Ministry of Education, School of Materials Science and Engineering and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, P. R. China.

⁴School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, P. R. China.

⁵Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Shanghai Institute of Applied Physics Chinese Academy of Sciences, Shanghai 201204, P. R. China.

⁶Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa, Macau SAR 999078, P. R. China.

摘要：

Metal halide perovskites are ideal candidates for indoor photovoltaics (IPVs) because of their easy-to-adjust bandgaps, which can be designed to cover the spectrum of any artificial light source. However, the serious non-radiative carrier recombination under low light illumination restrains the application of perovskite-based IPVs (PIPVs). Herein, polar molecules of amino naphthalene sulfonates are employed to functionalize the TiO₂ substrate, anchoring the CsPbI₃ perovskite crystal grains with a strong ion–dipole interaction between the molecule-level polar interlayer and the ionic perovskite film. The resulting high-quality CsPbI3 films with the merit of defect-immunity and large shunt resistance under low light conditions enable the corresponding PIPVs with an indoor power conversion efficiency of up to 41.2% (Pin: 334.11 μW cm⁻², Pout: 137.66 μW cm⁻²) under illumination from a commonly used indoor light-emitting diode light source (2956 K, 1062 lux). Furthermore, the device also achieves efficiencies of 29.45% (Pout: 9.80 μW cm⁻²) and 32.54% (Pout: 54.34 μW cm⁻²) at 106 (Pin: 33.84 μW cm⁻²) and 522 lux (Pin: 168.21 μW cm⁻²), respectively.

影响因子：

32.086

分区情况：

一区

链接：

https://onlinelibrary.wiley.com/doi/full/10.1002/adma.202210106